Shizhen Sun

Title: Shizhen Sun: Innovator in NOR Flash Memory Technology

Introduction

Shizhen Sun is a prominent inventor based in Jiangsu, China. He has made significant contributions to the field of flash memory technology. His innovative work has led to the development of a unique manufacturing method for NOR flash memory.

Latest Patents

Shizhen Sun holds a patent for a NOR structure flash memory and its manufacturing method. This patent outlines a process where a mask dielectric layer is formed on a second polysilicon layer of a gate stack structure. The method includes etching part of the mask dielectric layer to expose a section of the second polysilicon layer near the source. The exposed layer is then self-aligned to create a metal silicide layer. This design ensures that an unetched mask dielectric layer is positioned between the metal silicide layer and the drain contacting hole. The resulting NOR flash memory features a small drain current between the gate and drain electrodes, making the manufacturing process less complex and advantageous for large-scale production.

Career Highlights

Shizhen Sun is currently employed at CSMC Technologies Fab2 Co., Ltd. His work at this company has been instrumental in advancing flash memory technology. He has demonstrated a commitment to innovation and excellence in his field.

Collaborations

Shizhen has collaborated with notable colleagues, including Hao Fang and Yong Gu. Their teamwork has contributed to the successful development of advanced technologies in the semiconductor industry.

Conclusion

Shizhen Sun's contributions to NOR flash memory technology highlight his role as an influential inventor. His innovative methods and collaborative efforts continue to shape the future of flash memory applications.