Chiyoda-ku, Japan

Shinichi Ishizawa


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2013-2014

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2 patents (USPTO):Explore Patents

Title: The Innovations of Shinichi Ishizawa

Introduction

Shinichi Ishizawa is a notable inventor based in Chiyoda-ku, Japan. He has made significant contributions to the field of semiconductor technology. With a total of 2 patents, his work focuses on enhancing the efficiency and performance of semiconductor devices.

Latest Patents

Ishizawa's latest patents revolve around a novel semiconductor device. This device includes a rectifying element, an electrode pad electrically connected to the rectifying element, and a resistance and a depletion transistor arranged between the rectifying element and the electrode pad. The configuration allows for the rectifying element, resistance, depletion transistor, and electrode pad to be serially connected. The device is designed to generate a gate potential of the depletion transistor based on a difference in potential across the resistance. This innovation enables the production of a depletion layer in the channel of the depletion transistor based on the gate potential. As a result, the semiconductor device can achieve a reasonably large current at low voltage and a small current at high voltage.

Career Highlights

Shinichi Ishizawa is currently employed at Mitsubishi Electric Corporation, where he continues to develop cutting-edge technologies in the semiconductor sector. His work has been instrumental in advancing the capabilities of semiconductor devices.

Collaborations

Ishizawa collaborates with Shigeru Kusunoki, contributing to the innovative projects at Mitsubishi Electric Corporation.

Conclusion

Shinichi Ishizawa's contributions to semiconductor technology exemplify the importance of innovation in modern electronics. His patents reflect a commitment to improving device performance and efficiency.

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