Kawasaki, Japan

Shingo Hagiwara


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: Shingo Hagiwara: Innovator in Ferroelectric Memory Technology

Introduction

Shingo Hagiwara is a notable inventor based in Kawasaki, Japan. He has made significant contributions to the field of memory technology, particularly in the development of ferroelectric memory systems. His innovative work has led to advancements that enhance the reliability and efficiency of memory storage solutions.

Latest Patents

Hagiwara holds a patent for a ferroelectric memory and its operating method. This nonvolatile decision memory unit is designed to store decision data that indicates whether the data in normal memory cells is true or false. The invention includes an inversion control circuit that sets the inverting signal to a valid level with a predetermined probability. A write circuit is responsible for writing data that has logic inverse to the data being rewritten in the normal memory cells. This process also involves writing decision data indicating false to the decision memory unit when the inverting signal is valid. By rewriting inverse data at a predetermined frequency, the invention prevents imprinting during repetitive read operations. Additionally, it minimizes the deterioration of the ferroelectric capacitor by preventing frequent reverse polarization due to rewrite operations. This innovation significantly improves the reliability of ferroelectric memory systems.

Career Highlights

Shingo Hagiwara is currently employed at Fujitsu Microelectronics Limited, where he continues to work on cutting-edge memory technologies. His expertise in ferroelectric memory has positioned him as a key figure in the advancement of nonvolatile memory solutions.

Collaborations

Hagiwara collaborates with talented colleagues, including Yoshiaki Kaneko and Amane Inoue. Their combined efforts contribute to the innovative projects at Fujitsu Microelectronics Limited.

Conclusion

Shingo Hagiwara's contributions to ferroelectric memory technology exemplify the impact of innovative thinking in the field of electronics. His patent reflects a commitment to enhancing memory reliability and efficiency, marking him as a significant inventor in this domain.

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