Seongnam-si, South Korea

Shin-Hee Han

USPTO Granted Patents = 4 

Average Co-Inventor Count = 2.6

ph-index = 2

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 2012-2022

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4 patents (USPTO):

Title: The Innovations of Shin-Hee Han

Introduction

Shin-Hee Han is a prominent inventor based in Seongnam-si, South Korea. She has made significant contributions to the field of memory devices, particularly in the development of magnetoresistive random access memory (MRAM) technology. With a total of 4 patents to her name, her work has been influential in advancing electronic memory solutions.

Latest Patents

Shin-Hee Han's latest patents include a method of manufacturing a magnetoresistive random access memory device. This MRAM device features a first insulating interlayer on a substrate that includes both a cell region and a peripheral region. The design incorporates lower electrode contacts that extend through the first insulating interlayer of the cell region. Each lower electrode contact is topped with a first structure, which consists of a lower electrode, a magnetic tunnel junction structure, and an upper electrode, all stacked sequentially. Additionally, a capping layer covers the surfaces of the first insulating interlayer and the first structure in both the cell and peripheral regions. Notably, the upper surface of the capping layer on the first insulating interlayer in the peripheral region is higher than that on the first insulating interlayer between the first structures in the cell region.

Career Highlights

Shin-Hee Han is currently employed at Samsung Electronics Co., Ltd., where she continues to innovate in the field of memory technology. Her work has been pivotal in enhancing the performance and efficiency of MRAM devices, which are crucial for modern computing applications.

Collaborations

Throughout her career, Shin-Hee Han has collaborated with notable colleagues, including Woo-Jin Kim and Yong-kwan Kim. These collaborations have fostered a productive environment for innovation and development in their shared field of expertise.

Conclusion

Shin-Hee Han's contributions to the field of magnetoresistive random access memory technology exemplify her dedication to innovation. Her patents and work at Samsung Electronics Co., Ltd. highlight her role as a leading inventor in the industry.

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