Kyoto, Japan

Shimpei Ohnishi

USPTO Granted Patents = 2 

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2021-2023

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2 patents (USPTO):Explore Patents

Title: The Innovations of Shimpei Ohnishi

Introduction

Shimpei Ohnishi is a notable inventor based in Kyoto, Japan. He has made significant contributions to the field of semiconductor technology. With a total of 2 patents to his name, Ohnishi's work is recognized for its innovative approaches to semiconductor devices.

Latest Patents

Ohnishi's latest patents focus on advanced semiconductor devices. The first patent describes a semiconductor device that includes a first conductivity type semiconductor layer with an element portion and an outer peripheral portion. This design features multiple guard ring trenches and a second conductivity type outer peripheral portion impurity region. The second patent presents a similar semiconductor device with an emphasis on the arrangement of guard ring trenches and impurity regions, enhancing the device's performance and reliability.

Career Highlights

Shimpei Ohnishi is currently employed at Rohm Co., Ltd., a leading company in the semiconductor industry. His work at Rohm has allowed him to collaborate with other talented professionals and contribute to cutting-edge technology in the field.

Collaborations

One of Ohnishi's notable coworkers is Masaki Nagata. Their collaboration has likely fostered innovative ideas and advancements in semiconductor technology.

Conclusion

Shimpei Ohnishi's contributions to semiconductor technology through his patents and work at Rohm Co., Ltd. highlight his role as a significant inventor in the industry. His innovative designs continue to influence the development of advanced semiconductor devices.

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