This inventor holds 1 USPTO granted patent. Top assignee: Eic Corporation. Active years: 2001.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2001
Title: Shihui Xu - Innovator in RF Amplifier Technology
Shihui Xu is a notable inventor based in San Jose, CA, who has made significant contributions to the field of radio frequency (RF) amplification. His innovative work focuses on enhancing the performance and efficiency of RF amplifier circuits.
Latest Patents
Shihui Xu holds a patent for an "Isolation circuit for use in RF amplifier bias circuit." This invention addresses the challenges faced in RF amplifier circuits that utilize multiple transistor stages. The patent describes a bias circuit that applies a DC bias to the input terminal of a transistor while ensuring that the RF signal is attenuated. The isolation circuit connects a DC power supply to the bias circuit, allowing DC voltage to be applied while preventing RF current flow through a reactive serial path. This design includes components such as inductors and capacitors to optimize performance.
Career Highlights
Shihui Xu is currently employed at EIC Corporation, where he continues to develop innovative solutions in RF technology. His expertise in circuit design and RF applications has positioned him as a valuable asset to his team and the industry.
Collaborations
Shihui has collaborated with talented colleagues, including Nanlei Larry Wang and Shuo-Yuan Hsiao, who share his passion for advancing technology in the field of RF amplification.
Conclusion
In summary, Shihui Xu is a dedicated inventor whose work in RF amplifier technology has led to valuable innovations. His patent for an isolation circuit exemplifies his commitment to improving electronic circuit performance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile