Shigeo Yasuda

Title: Shigeo Yasuda: Innovator in Ion Implantation Technology

Introduction

Shigeo Yasuda is a notable inventor based in Nishiwaki, Japan. He is recognized for his contributions to the field of semiconductor technology, particularly in ion implantation processes. His innovative work has significantly impacted the manufacturing of advanced electronic devices.

Latest Patents

Yasuda holds a patent for a "High current ion implanter and method of ion implant by the implanter." This invention addresses the challenges associated with ion implantation, specifically in trench capacitors of DRAM. The technology enhances beam current while preserving device characteristics, which is crucial for the performance of modern electronic components. The high current ion implanter consists of an implantation chamber, a bias plate, a secondary electron implantation cylinder, and an extension cylinder, which is designed to maintain ground potential.

Career Highlights

Throughout his career, Yasuda has worked with prominent companies in the semiconductor industry. He has been associated with KTI Semiconductor Ltd. and Texas Instruments Corporation, where he contributed to various projects that advanced semiconductor manufacturing techniques. His expertise in ion implantation has made him a valuable asset in these organizations.

Collaborations

Yasuda has collaborated with several professionals in his field, including Hirokazu Ueda and Masuo Koga. These partnerships have fostered innovation and development in semiconductor technologies.

Conclusion

Shigeo Yasuda's contributions to ion implantation technology have made a significant impact on the semiconductor industry. His innovative patent and collaborations with industry leaders highlight his role as a key figure in advancing electronic device manufacturing.