Company Filing History:
Years Active: 2017-2019
Title: Innovations by Inventor Shangbin Ko
Introduction
Shangbin Ko is a notable inventor based in Poughkeepsie, NY (US). He has made significant contributions to the field of semiconductor device fabrication. With a total of 3 patents to his name, his work has had a considerable impact on the industry.
Latest Patents
One of his latest patents is titled "Gap fill of metal stack in replacement gate process." This patent describes a method for fabricating a semiconductor device that involves forming a replacement gate structure on a semiconductor layer of a substrate. The replacement gate structure includes a polysilicon layer. After the formation of the replacement gate structure, a gate spacer is created on it. Atoms are then implanted in the upper portion of the polysilicon layer, which expands both the polysilicon layer and the corresponding upper portion of the gate spacer laterally. Following the implantation, the polysilicon layer is removed to create a gate cavity, where a metal gate stack is formed. This metal gate stack features an upper portion that is wider than the lower portion.
Career Highlights
Shangbin Ko is currently employed at International Business Machines Corporation (IBM). His work at IBM has allowed him to explore innovative solutions in semiconductor technology. His expertise in this area has led to advancements that benefit the industry.
Collaborations
Shangbin Ko has collaborated with notable coworkers, including Victor Chan and Jin Ping Han. These collaborations have fostered a creative environment that encourages innovation and the development of new technologies.
Conclusion
Shangbin Ko's contributions to semiconductor device fabrication through his patents and work at IBM highlight his role as a significant inventor in the field. His innovative methods continue to influence the industry and pave the way for future advancements.