Sergey A Nikishin

Title: Innovations of Sergey A. Nikishin in Epitaxial Growth Technology.

Introduction

Sergey A. Nikishin is a notable inventor based in Lubbock, TX (US). He has made significant contributions to the field of epitaxial growth, particularly in the development of high-quality nitride layers on silicon substrates. His innovative methods have implications for various applications in semiconductor technology.

Latest Patents

Nikishin holds a patent for a method of epitaxial growth of high-quality nitride layers on silicon substrates. This patent describes a process where aluminum nitride (AlN) layers are grown on silicon substrates using molecular beam epitaxial (MBE) growth techniques. The method involves initially exposing the silicon substrate to background ammonia, followed by alternating the flux of aluminum without ammonia and ammonia without aluminum. This careful control of the growth environment minimizes the formation of amorphous silicon nitride (SiN) compounds, which is crucial for achieving high-quality AlN layers. The resulting AlN layer can serve as a buffer for further growth of AlGaN/GaN structures.

Career Highlights

Nikishin is affiliated with the Texas Tech University System, where he continues to advance research in semiconductor materials and epitaxial growth techniques. His work has garnered attention for its potential to enhance the performance of electronic devices.

Collaborations

Nikishin has collaborated with Henryk Temkin, contributing to the advancement of research in their field. Their partnership has led to innovative approaches in the development of nitride layers.

Conclusion

Sergey A. Nikishin's contributions to epitaxial growth technology highlight his role as a key inventor in the semiconductor industry. His patented methods pave the way for advancements in high-quality nitride layer production, which are essential for future electronic applications.