Daejeon, South Korea

Seong-Bock Kim


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 1999

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Innovations in Semiconductor Technology: The Contributions of Seong-Bock Kim

Introduction

Seong-Bock Kim is an esteemed inventor based in Daejeon, South Korea, recognized for his significant contributions to the field of semiconductor technology. With one patent to his name, he has demonstrated a profound understanding of compound semiconductors and growth processes essential for effective device fabrication.

Latest Patents

Seong-Bock Kim holds a patent titled "Formation of InGaSa p-n Junction by control of growth temperature." This innovative patent describes an epitaxial growth method for a compound semiconductor thin film. The process elaborates a technique capable of creating a p-n junction characterized by an atomic-scale ultra-micro structure. The method involves loading a compound semiconductor substrate into a reaction chamber, where Group V and III metal organic source gases, unaffected by thermal pre-decomposition, are injected. Growth of either p-type or n-type compound semiconductors occurs while optimizing the growth temperature, making this approach vital for advanced semiconductor applications.

Career Highlights

Seong-Bock Kim is affiliated with the Electronics and Telecommunications Research Institute, where he continues his innovative work in semiconductor technologies. His career is marked by a commitment to advancing the understanding of compound semiconductor fabrication, positioning him as a valuable asset in the research community.

Collaborations

In his professional journey, Seong-Bock Kim has collaborated with notable colleagues including Jeong-Rae Ro and El-Hang Lee. These partnerships have fostered a productive research environment, leading to groundbreaking developments in the semiconductor field.

Conclusion

Seong-Bock Kim's contributions reflect a blend of innovative research and practical applications in semiconductor technology. His patent on the formation of InGaSa p-n junctions underscores the importance of precision in compound semiconductor fabrication, setting a benchmark for future advancements in the field.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…