Hachioji, Japan

Seigo Kishino

This inventor holds 3 USPTO granted patents. Top assignee: Vlsi Technology Research Association. Active years: 1982-1983.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seigo Kishino. Retrieved from https://idiyas.com/inventor/seigo-kishino

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 3

Forward Citations = 122(Granted Patents)


Company Filing History:


Years Active: 1982-1983

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3 patents (USPTO):Explore Patents

Title: Seigo Kishino: Pioneering Innovations in Semiconductor Technologies

Introduction

Seigo Kishino, an accomplished inventor based in Hachioji, Japan, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of three patents, Kishino’s work focuses on advancing the manufacturing processes and quality of semiconductor materials. His innovative approach is paving the way for enhanced performance in electronic devices.

Latest Patents

Kishino’s latest patents showcase his expertise in the semiconductor realm. One notable invention is a method of manufacturing a single crystal silicon rod. This method utilizes the pulling technique and is characterized by reducing the intracrystal temperature of the growing silicon rod from 900°C to 500°C in less than four hours. This innovation aims to optimize the production process of high-quality silicon rods essential for various semiconductor applications.

Another remarkable patent involves a method for creating a fault-free surface zone in semiconductor devices. In this process, a silicon wafer is initially annealed in a non-oxidizing atmosphere, such as nitrogen, at temperatures ranging from 950°C to 1,300°C. Following this, the wafer undergoes a secondary annealing at temperatures between 600°C to 800°C to generate high-density microdefects within the material, ultimately improving the overall reliability and performance of semiconductor devices.

Career Highlights

Seigo Kishino is associated with the VLSI Technology Research Association, where he applies his extensive knowledge to further advancements in semiconductor technology. His innovative methodologies in crystal growth and wafer treatment are setting new benchmarks in the industry and attracting attention from various research and development sectors.

Collaborations

Throughout his career, Kishino has collaborated with brilliant minds such as Yoshiaki Matsushita and Masaru Kanamori. These partnerships have facilitated the sharing of ideas and technical expertise, significantly contributing to the successful execution of innovative projects within the semiconductor sector.

Conclusion

Seigo Kishino’s contributions and patents reflect a commitment to excellence in semiconductor innovation. His groundbreaking methods not only enhance the manufacturing processes but also promise to improve the functionality of electronic devices. As the industry continues to evolve, inventors like Kishino will remain pivotal in shaping the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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