Company Filing History:
Years Active: 1978
Title: Innovations by See-Ark Chan in Silicon Carbide Film Technology.
Introduction
See-Ark Chan is a notable inventor based in Croton-on-Hudson, NY (US). He has made significant contributions to the field of materials science, particularly in the development of methods for forming silicon carbide films.
Latest Patents
One of See-Ark Chan's key patents is titled "Method for forming smooth self limiting and pin hole free SiC films on Si." This invention provides a method for forming a protective silicon carbide (SiC) film on a silicon (Si) substrate. The method allows for the simultaneous formation of silicon carbide on all surfaces of the Si substrate. The process involves placing the silicon substrate in a susceptor with tantalum carbide surfaces in a high purity ambient. The substrate is heated to approximately 1250°C to remove native SiO2 from its surface. After cooling to about 900°C, methane is introduced for about 30 minutes to deposit a layer of carbon, which is then reacted with the Si substrate at 1250°C to create a smooth, pin hole free SiC film. Additionally, SiC layers can be formed through a one-step reaction where methane is directly reacted with Si at 1250°C.
Career Highlights
See-Ark Chan is associated with the International Business Machines Corporation (IBM), where he has contributed to various innovative projects. His work has been instrumental in advancing the technology related to silicon carbide films, which have applications in electronics and materials engineering.
Collaborations
Throughout his career, See-Ark Chan has collaborated with esteemed colleagues such as Moshe Balog and Melvin Berkenblit. These collaborations have further enhanced the research and development efforts in the field of semiconductor materials.
Conclusion
See-Ark Chan's contributions to the development of silicon carbide film technology exemplify the impact of innovative thinking in materials science. His patent and work at IBM highlight the importance of advancements in this area for future technological applications.