Company Filing History:
Years Active: 2018
Title: The Innovations of Sebastian Blaeser
Introduction
Sebastian Blaeser is a notable inventor based in Neuss, Germany. He has made significant contributions to the field of semiconductor technology, particularly with his work on tunnel field-effect transistors (TFETs). His innovative approach has the potential to enhance the performance of electronic devices.
Latest Patents
Sebastian Blaeser holds a patent for a "Tunnel field-effect transistor and method for producing same." This patent describes a method for producing a TFET that includes a source region, a channel region, and a drain region. The process involves arranging an epitaxial layer on a silicon substrate, applying a gate arrangement with a gate electrode, and forming various regions to achieve a tunnel junction parallel to the electric field lines of the gate electrode.
Career Highlights
Throughout his career, Blaeser has worked with prominent research institutions, including Forschungszentrum Jülich GmbH. His work has focused on advancing semiconductor technologies and improving the efficiency of electronic components.
Collaborations
Sebastian Blaeser has collaborated with esteemed colleagues such as Qing-Tai Zhao and Siegfried Mantl. These partnerships have contributed to the development of innovative technologies in the semiconductor field.
Conclusion
Sebastian Blaeser is a distinguished inventor whose work on tunnel field-effect transistors showcases his expertise and innovative spirit. His contributions to semiconductor technology continue to influence the industry and pave the way for future advancements.