Company Filing History:
Years Active: 1996
Title: Scott R Lucas: Innovator in Group III-V Compound Semi-conductors
Introduction
Scott R Lucas is an accomplished inventor based in Pittsburgh, PA, with a significant contribution to the field of semi-conductors. He holds a patent that reveals a sophisticated method for forming pure group III-V compound semi-conductor films, which are essential for various high-performance electronic applications.
Latest Patents
Scott R Lucas has been granted one notable patent: a method for synthesizing Group III-V compound semi-conducting films. This innovation details a systematic approach for synthesizing these films from Group III metal alkyl and Group V hydride. The process involves utilizing a vacuum chamber where a monolayer of the Group III metal alkyl is adsorbed on an inert surface, followed by backfilling the chamber with Group V hydride. Through controlled conditions and advanced techniques, the invention aims to produce thermally stable semi-conducting films, particularly targeting GaN films.
Career Highlights
Lucas has established his professional career at the University of Pittsburgh, a reputable institution contributing to groundbreaking research. His work in semi-conductor technologies has significant implications for the electronics industry, allowing for the development of more efficient devices.
Collaborations
Throughout his career, Scott R Lucas has collaborated with esteemed colleagues, including Andreas H Ubner and William D Partlow. These partnerships reflect a commitment to advancing the technology surrounding Group III-V semi-conductors and enhancing the broader field of materials science.
Conclusion
In summary, Scott R Lucas stands out as a vital contributor to the innovation of compound semi-conductors. His patented method not only showcases his ingenuity but also indicates promising advancements in electronic materials. The work conducted at the University of Pittsburgh, alongside his collaborators, continues to pave the way for future developments in the field.
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