Bethlehem, PA, United States of America

Scott F Shive


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 237(Granted Patents)


Company Filing History:


Years Active: 1989

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1 patent (USPTO):Explore Patents

Title: The Innovations of Scott F. Shive: Pioneering Low Defect Density Oxides

Introduction: Scott F. Shive, an accomplished inventor based in Bethlehem, PA, has made significant contributions to the field of semiconductor device fabrication. With one notable patent to his name, Shive’s work focuses on creating low defect density oxides that play a critical role in enhancing the performance of electronic components.

Latest Patents: Scott F. Shive's patent, titled “Fabricating a Semiconductor Device with Low Defect Density Oxide,” describes a novel method for producing low defect density oxides. This invention is particularly valuable as it provides thin gate oxides or charge storage capacitors with desirable characteristics. The innovative process involves the formation of first and second layers on a substrate, which have misaligned defect structures. A third layer is then grown by diffusing a species through these layers to the substrate, leading to a reduction in defect density due to the unique construction of the layers.

Career Highlights: Shive has made his mark in the semiconductor industry while working at American Telephone & Telegraph Co., specifically within AT&T Bell Laboratories. His research and development efforts have focused on semiconductor technologies that enhance device efficiency and reliability, thereby contributing to advancements in electronic devices.

Collaborations: Throughout his career, Scott F. Shive has worked alongside notable colleagues, such as Raymond H. Doklan and Edward P. Martin, Jr. Their collaborative efforts have furthered the innovations within the field and have played a crucial role in refining semiconductor fabrication processes.

Conclusion: Scott F. Shive’s work exemplifies significant advancements in semiconductor technology through his patented invention of low defect density oxides. His contributions at AT&T Bell Laboratories highlight the importance of innovation and collaboration in the fields of science and technology, setting a foundation for future developments in electronic component manufacturing.

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