Taejon, South Korea

Sang-yeon Han


Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 47(Granted Patents)


Company Filing History:


Years Active: 2003-2004

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2 patents (USPTO):Explore Patents

Title: Innovations of Sang-yeon Han in Field Effect Transistors

Introduction

Sang-yeon Han is a notable inventor based in Taejon, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of field effect transistors. With a total of 2 patents to his name, his work has implications for the advancement of electronic devices.

Latest Patents

Sang-yeon Han's latest patents focus on methods of forming and operating field effect transistors that utilize gate and sub-gate electrodes. These transistors include a semiconductor substrate with a channel region of first conductivity type, along with source and drain regions of second conductivity type. His innovative designs allow for the formation of P-N rectifying junctions with the channel region. The gate electrode is made from a first electrically conductive material with a specific work function, while the sub-gate electrode uses a different material with an unequal work function. This difference is crucial for creating an inversion-layer in the channel region, enhancing the performance of the transistors.

Career Highlights

Sang-yeon Han is currently employed at Samsung Electronics Co., Ltd., a leading company in the electronics industry. His work at Samsung has allowed him to be at the forefront of technological advancements in semiconductor devices.

Collaborations

He has collaborated with notable coworkers, including Hyung-cheol Shin and Jong-ho Lee, contributing to the innovative projects at Samsung.

Conclusion

Sang-yeon Han's contributions to the field of field effect transistors demonstrate his expertise and commitment to advancing semiconductor technology. His patents reflect a deep understanding of materials and their applications in electronics, paving the way for future innovations.

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