Sang-Gyu Park

Title: Sang-Gyu Park: Innovator in Semiconductor Memory Technology

Introduction

Sang-Gyu Park is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor memory technology, holding a total of 4 patents. His work focuses on enhancing the efficiency and reliability of memory systems.

Latest Patents

Among his latest patents is the "STT-MRAM failed address bypass circuit and STT-MRAM device including same." This invention involves a spin transfer torque magnetic random access memory (STT-MRAM) device that features a memory array with a data storage unit, a defect area address storage unit, and a spare area for data storage. The device includes a bypass determination unit that allows memory access to bypass defective areas, improving overall performance. Another notable patent is the "Semiconductor memory system and operating method thereof," which describes a memory device with a read/write circuit and a state transition recognition circuit. This system detects state transitions in data cells and optimizes write operations accordingly.

Career Highlights

Sang-Gyu Park has worked with leading organizations in the technology sector, including Samsung Electronics and the Industry-University Cooperation Foundation at Hanyang University. His experience in these companies has allowed him to develop innovative solutions in semiconductor memory technology.

Collaborations

He has collaborated with notable colleagues such as Yun-su Kim and Dong-Gi Lee, contributing to advancements in their respective fields.

Conclusion

Sang-Gyu Park's contributions to semiconductor memory technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the industry positively.