Samuel D Hawkins

Title: Samuel D Hawkins: Innovator in Infrared Photodetection

Introduction

Samuel D Hawkins is a notable inventor based in Albuquerque, NM (US). He has made significant contributions to the field of infrared photodetection, particularly with his innovative designs and applications. His work has implications for various technological advancements, especially in the realm of semiconductor devices.

Latest Patents

Hawkins holds a patent for a "Strain-compensated infrared photodetector and photodetector array." This photodetector is designed for the detection of infrared light with a long cutoff wavelength in the range of about 4.5-10 microns. The device can be formed on a semiconductor substrate as an nBn device, featuring a light-absorbing region that includes InAsSb light-absorbing layers and tensile-strained layers interspersed between them. The tensile-strained layers can be made from GaAs, InAs, InGaAs, or a combination of these III-V compound semiconductor materials. Additionally, a barrier layer in the photodetector can be formed from AlAsSb or AlGaAsSb, while a contact layer can be made from InAs, GaSb, or InAsSb. This photodetector is useful both as an individual device and for forming a focal plane array.

Career Highlights

Hawkins is currently associated with Sandia Corporation, where he continues to push the boundaries of innovation in photodetection technology. His work has garnered attention for its potential applications in various fields, including defense and telecommunications.

Collaborations

Hawkins has collaborated with notable colleagues such as Jin K Kim and John F Klem, contributing to advancements in their shared field of expertise.

Conclusion

Samuel D Hawkins is a distinguished inventor whose work in infrared photodetection exemplifies innovation in semiconductor technology. His contributions continue to influence the industry and pave the way for future advancements.