Company Filing History:
2 out of 5,076 
2 out of 9 Years Active: 2017-2019
Title: Saleem Hamady: Innovator in HEMT Transistor Technology
Introduction
Saleem Hamady is a notable inventor based in Toulouse, France. He has made significant contributions to the field of semiconductor technology, particularly in the development of high electron mobility transistors (HEMT). With a total of 2 patents, his work has advanced the understanding and application of heterojunction structures in semiconductor materials.
Latest Patents
Hamady's latest patents include innovative designs for HEMT transistors. The first patent describes a heterojunction structure of semiconductor material specifically designed for HEMT applications. This design features a substrate and a stack of at least three buffer layers made from a wide bandgap semiconductor material based on column-III nitride. The structure includes an unintentionally doped first buffer layer, a second buffer layer with constant P+ doping, and a third buffer layer that contains both unintentionally doped and N+ doped regions.
The second patent focuses on a heterojunction structure that also utilizes a large bandgap semiconductor material based on column-III nitride. This design includes a buffer layer that is not intentionally doped with n-type carriers and a barrier layer with a narrower bandgap than the buffer layer. The structure is further enhanced by an intentionally doped area within the buffer layer, which is crucial for the transistor's performance.
Career Highlights
Throughout his career, Saleem Hamady has worked with prestigious institutions such as the Centre National de la Recherche Scientifique and Université Libanaise. His experience in these organizations has allowed him to collaborate on various research projects and contribute to advancements in semiconductor technology.
Collaborations
Some of Hamady's notable coworkers include Frédéric Morancho and Bilal Beydoun. Their collaborative efforts have played a significant role in the development of innovative semiconductor solutions.
Conclusion
Saleem Hamady's contributions to the field of HEMT transistor technology highlight his expertise and dedication as an inventor. His patents reflect a deep understanding of semiconductor materials and their applications, paving the way for future innovations in the industry.