Hitachi, Japan

Saburou Oikawa


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: The Innovations of Saburou Oikawa

Introduction

Saburou Oikawa is a notable inventor based in Hitachi, Japan. He has made significant contributions to the field of semiconductor technology. His work focuses on enhancing the reliability and efficiency of semiconductor devices.

Latest Patents

Oikawa holds a patent for a "Semiconductor device and power converter using the same." This invention aims to reduce the field intensity on the termination surface while maintaining the on-characteristic. The design features a drift layer composed of two layers, an n-layer and an n-layer, with a termination region formed on the surface of the n-layer. The impurity concentration ratio between the two layers is less than 1:2, and the thickness of the n-layer is less than that of the source n-layer. This innovative approach ensures reliability even during high-temperature operations. He has 1 patent to his name.

Career Highlights

Oikawa is associated with Hitachi, Ltd., a leading company in technology and innovation. His work at Hitachi has allowed him to explore various advancements in semiconductor devices. His contributions have been instrumental in pushing the boundaries of what is possible in this field.

Collaborations

Throughout his career, Oikawa has collaborated with esteemed colleagues such as Hidekatsu Onose and Tsutomu Yatsuo. These collaborations have fostered a creative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Saburou Oikawa's work in semiconductor technology exemplifies the spirit of innovation. His patent and collaborations highlight his commitment to advancing the field. Oikawa continues to be a significant figure in the world of inventions and technology.

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