Ryuuji Ohno

Title: Ryuuji Ohno: Innovator in Metal Impurity Measurement

Introduction

Ryuuji Ohno is a notable inventor based in Kanagawa, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the measurement of metal impurities in silicon wafers. His innovative approach has the potential to enhance the accuracy of impurity concentration measurements, which is crucial for the semiconductor industry.

Latest Patents

Ohno holds a patent for a method that calculates a more accurate metal impurity concentration contained in a silicon wafer. This method corrects measured values using a calibration based on the dependent relationship of the minority carrier diffusion length with the time elapsed from activation to actual measurement, electric resistivity, and temperature. By utilizing surface photovoltage, this method allows for a more precise measurement of metal impurity concentration. The calibration step involves using metal impurity concentrations measured by different principles, ensuring that actual measured values are corrected in light of this dependent relationship.

Career Highlights

Ryuuji Ohno is currently employed at Komatsu Electronic Metals Co., Ltd., where he continues to develop innovative solutions in the semiconductor field. His work has been instrumental in advancing measurement techniques that are vital for the production of high-quality silicon wafers.

Collaborations

Ohno collaborates with Kei Matsumoto, a fellow innovator in the field. Together, they work on enhancing measurement methodologies and exploring new avenues for improving semiconductor technology.

Conclusion

Ryuuji Ohno's contributions to the measurement of metal impurities in silicon wafers exemplify the importance of innovation in the semiconductor industry. His patented method not only improves measurement accuracy but also supports the ongoing advancement of semiconductor technology.