Location History:
- Fussa, JP (2010)
- Tokyo, JP (2012)
Company Filing History:
Years Active: 2010-2012
Title: The Innovations of Ryoto Fukuyama
Introduction
Ryoto Fukuyama is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology. With a total of 2 patents, his work has had a notable impact on the industry.
Latest Patents
Fukuyama's latest patents include a semiconductor device and a method to manufacture it. The semiconductor device features a semiconductor substrate with a connection electrode on its upper surface, linked to an integrated circuit. It also includes a through electrode that penetrates both the semiconductor substrate and the connection electrode, with an insulation portion positioned between them. This through electrode is designed to protrude outward from the upper surfaces of both the semiconductor substrate and the connection electrode, establishing a connection in the area where it penetrates the connection electrode.
Career Highlights
Ryoto Fukuyama is currently employed at Spansion LLC, where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices.
Collaborations
Fukuyama has collaborated with notable colleagues, including Masataka Hoshino and Koji Taya. Their combined expertise has contributed to the success of various projects within the company.
Conclusion
Ryoto Fukuyama's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in technology and the semiconductor industry.