Ryoko Yamada

Title: The Innovative Contributions of Ryoko Yamada

Introduction

Ryoko Yamada is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of materials science, particularly in the development of silicon nitride thin films. With a total of nine patents to his name, Yamada's work has advanced the technology used in various electronic applications.

Latest Patents

Yamada's latest patents focus on the formation of silicon nitride (SiN) thin films. One of his notable inventions involves methods of forming silicon nitride thin films on a substrate in a reaction space under high pressure. This method includes multiple plasma enhanced atomic layer deposition (PEALD) cycles, where at least one cycle involves contacting the substrate with a nitrogen plasma at a process pressure ranging from 20 Torr to 500 Torr. The silicon precursor used in this process can be a silyl halide, such as HSiI. His innovations allow for the deposition of silicon nitride films with improved properties on three-dimensional structures, achieving a wet etch rate ratio of about 1:1 in dilute HF.

Another patent by Yamada details methods and precursors for forming silicon nitride films, which can be deposited using atomic layer deposition (ALD) techniques, including plasma enhanced ALD. In this process, the deposited silicon nitride can undergo plasma treatment, specifically nitrogen plasma treatment. The silicon precursors may include an iodine ligand, resulting in silicon nitride films that exhibit a uniform etch rate for both vertical and horizontal portions when applied to three-dimensional structures like FinFETs. Some of these films have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).

Career Highlights

Ryoko Yamada is currently employed at ASM IP Holding B.V., where he continues to innovate in the field of semiconductor materials. His expertise in silicon nitride film deposition has positioned him as a key player in advancing semiconductor technology.

Collaborations

Yamada has collaborated with notable colleagues, including Shang Chen and Viljami J. Pore, to further enhance the research and development of silicon nitride applications.

Conclusion

Ryoko Yamada's contributions to the field of materials science, particularly in silicon nitride thin films, have made a significant impact on semiconductor technology. His innovative patents and ongoing research continue to push the boundaries