Company Filing History:
Years Active: 1997-2003
Title: Ryoji Sakamoto: Innovator in Field-Effect Transistor Technology
Introduction
Ryoji Sakamoto is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of field-effect transistors. With a total of 4 patents to his name, Sakamoto's work has had a notable impact on the industry.
Latest Patents
Sakamoto's latest patents focus on advancements in field-effect transistors. One of his inventions features a composite channel structure that includes a first channel layer made of GaInP semiconductor and a second channel layer made of GaAs semiconductor. This design allows for improved performance under varying electric field conditions. Another patent relates to a MESFET field-effect transistor that enhances the linearity of mutual conductance over a broader range of gate bias. This innovation includes auxiliary layers that optimize the doping profile, effectively controlling the depletion layer and suppressing long gate effects.
Career Highlights
Ryoji Sakamoto is currently employed at Sumitomo Electric Industries, Limited, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the capabilities of field-effect transistors, making them more efficient and reliable for various applications.
Collaborations
Sakamoto has collaborated with notable colleagues such as Sosaku Sawada and Hiromi Kurashima. Their combined expertise has contributed to the successful development of innovative technologies in the semiconductor field.
Conclusion
Ryoji Sakamoto's contributions to field-effect transistor technology exemplify his dedication to innovation in the semiconductor industry. His patents reflect a commitment to enhancing the performance and reliability of electronic components.