Company Filing History:
Years Active: 1986
Title: Russell E Hayes: Innovator in Epitaxial Film Growth
Introduction
Russell E Hayes is a notable inventor based in Boulder, Colorado. He has made significant contributions to the field of semiconductor technology. His innovative work focuses on processes that enhance the efficiency of epitaxial film growth.
Latest Patents
Russell E Hayes holds a patent for a process that selectively patterns epitaxial film growth on a semiconductor substrate. This process involves forming a masking member on the substrate's surface, which consists of at least two layers. A window is opened in a selected portion of the second layer, allowing an etchant to dissolve the first layer and expose the substrate beneath. This method creates an overhanging ledge portion with the second layer, facilitating the deposition of the epitaxial film on the exposed substrate surface. The process concludes with the removal of the first layer, fully exposing the substrate.
Career Highlights
Russell E Hayes has dedicated his career to advancing semiconductor technologies. His innovative approaches have led to improved methods for film growth, which are crucial for the development of various electronic devices. His work has been recognized for its potential to enhance the performance and efficiency of semiconductor applications.
Collaborations
Russell has collaborated with various professionals in the field, including his coworker Peter Sheldon. Their combined expertise has contributed to the successful development of innovative processes in semiconductor technology.
Conclusion
Russell E Hayes is a prominent figure in the realm of semiconductor innovation, with a focus on epitaxial film growth processes. His contributions continue to influence the industry and pave the way for future advancements.