Xi'an, China

Runzi Hao


Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2021

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1 patent (USPTO):

Title: The Innovative Mind of Runzi Hao

Introduction

Runzi Hao is a prominent inventor based in Xi'an, China. He has made significant contributions to the field of magnetic devices, showcasing his expertise through his innovative patent. His work reflects a deep understanding of advanced technologies and their applications.

Latest Patents

Runzi Hao holds a patent for a three-dimensional magnetic device and magnetic memory. This invention is based on the spin Hall effect and includes an internal electrode, at least one magnetic junction, and at least one external electrode. The design features columnar structures for these components, enhancing the device's functionality. Each magnetic junction consists of a magnetic free layer, a magnetic reference layer, and a non-magnetic spacing layer. The internal electrode is in contact with the magnetic free layer, while the magnetic reference layer connects to the external electrode. This innovative device can be stacked vertically, allowing for efficient magnetization reversal through a combination of spin-orbit torque and spin transfer torque. The advantages of this magnetic device include reduced heating, improved reliability and stability, and high storage density while ensuring thermal stability.

Career Highlights

Runzi Hao is affiliated with Xi'an Jiaotong University, where he continues to advance his research and development in magnetic technologies. His academic background and ongoing projects contribute to the university's reputation as a leading research institution.

Collaborations

Runzi Hao collaborates with notable colleagues, including Tai Min and Lei Wang. Their combined expertise fosters an environment of innovation and creativity, leading to groundbreaking advancements in their field.

Conclusion

Runzi Hao's contributions to the field of magnetic devices exemplify his innovative spirit and dedication to research. His patent reflects a significant advancement in technology, promising enhanced performance and stability in magnetic memory applications.

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