Runchen Fang

Title: The Innovations of Runchen Fang

Introduction

Runchen Fang is a notable inventor based in San Jose, CA. He has made significant contributions to the field of non-volatile memory technology. His innovative work has led to the development of a unique patent that enhances the performance of storage devices.

Latest Patents

Runchen Fang holds a patent for an invention titled "Adaptive Negative Word Line Voltage." This patent describes a storage device that includes a non-volatile memory with control circuitry and an array of memory cells. The invention focuses on a controller that determines negative word line settings based on the product lifetime of the memory. This allows for optimized performance during various operations, ensuring that the device operates efficiently throughout its lifecycle.

Career Highlights

Runchen Fang is currently employed at SanDisk Technologies Inc., where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of storage devices, making them more reliable and efficient. With 1 patent to his name, he has established himself as a key player in the industry.

Collaborations

Runchen has collaborated with talented coworkers such as Xiaoyu Che and Yanjie Wang. Their combined expertise has contributed to the success of various projects within the company.

Conclusion

Runchen Fang's contributions to non-volatile memory technology exemplify the spirit of innovation. His patent for adaptive negative word line voltage showcases his commitment to enhancing storage device performance. As he continues his work at SanDisk Technologies Inc., the impact of his inventions will likely resonate throughout the industry for years to come.