Beijing, China

Ru-Jun Sun

USPTO Granted Patents = 1 

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2017

Loading Chart...
1 patent (USPTO):Explore Patents

Title: **Ru-Jun Sun: Innovator in Oxide Semiconductor Films**

Introduction

Ru-Jun Sun is a significant inventor based in Beijing, China, recognized for his contributions to the field of semiconductor technology. With one patent to his name, he has made strides in the development of oxide semiconductor films, indicating his expertise in material science and engineering.

Latest Patents

Ru-Jun Sun holds a patent for a sputtering target, oxide semiconducting film, and method for making the same. This innovative oxide semiconductor film comprises indium (In), cerium (Ce), zinc (Zn), and oxygen (O) elements. The molar ratio of In, Ce, and Zn is specified as In:Ce:Zn within the range of 2:1:(0.5 to 2). His method involves forming this oxide film on a substrate using a sputtering method with a target made of Indium Cerium Zinc Oxide (InCeZnO), where x ranges from 0.5 to 2. This advancement may have significant implications for electronic and optoelectronic applications.

Career Highlights

Throughout his career, Ru-Jun Sun has been associated with esteemed institutions such as Tsinghua University and Hon Hai Precision Industry Co., Ltd. These affiliations have provided him with a robust platform to explore and refine his innovations in oxide semiconductor technology. His work at these organizations has supported the advancement of cutting-edge research and the application of his inventions in real-world scenarios.

Collaborations

In his professional journey, Ru-Jun Sun has collaborated with notable colleagues, including Da-Ming Zhuang and Ming Zhao. Such teamwork emphasizes the importance of collaborative efforts in fostering innovation and achieving successful results in research and development projects.

Conclusion

Ru-Jun Sun stands out as a dedicated innovator in the realm of oxide semiconductor films. His patent and career accomplishments underscore an ongoing commitment to advancing semiconductor technology. With his background in esteemed organizations and fruitful collaborations, he continues to contribute to the shaping of innovative solutions in the field.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…