Albuquerque, NM, United States of America

Roy Hogan, Jr

USPTO Granted Patents = 1 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2024

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Roy Hogan, Jr.: Innovator in Thermochemical Reactor Technology

Introduction

Roy Hogan, Jr. is a notable inventor based in Albuquerque, NM (US). He has made significant contributions to the field of thermochemical reactors, showcasing his innovative spirit through his patented inventions.

Latest Patents

Hogan holds a patent for a "Two-step thermochemical labyrinth reactor and methods." This invention features a unique design that includes a reoxidation zone and a reduction zone equipped with electric heaters. The reactor is designed with a recuperation zone that connects these two zones through first and second channels. These channels are separated by windows that allow thermal radiation exchange while preventing gas exchange. The reactor also incorporates plates made of reactive material and a transit system that shuttles these plates between the reduction and reoxidation zones. Additionally, it includes a feedstock gas emitter and a gas extractor to facilitate the production of gas from the feedstock.

Career Highlights

Roy Hogan, Jr. is affiliated with Arizona State University, where he continues to advance his research and development in thermochemical technologies. His work has garnered attention for its potential applications in energy efficiency and chemical processing.

Collaborations

Hogan collaborates with talented individuals such as Ivan Ermanoski and Ryan Milcarek, contributing to a dynamic research environment that fosters innovation.

Conclusion

Roy Hogan, Jr. exemplifies the spirit of innovation through his work on thermochemical reactors. His contributions to this field highlight the importance of research and development in advancing technology for future applications.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…