Location History:
- Tremestieri Etneo, IT (2010)
- Rome, IT (2024)
Company Filing History:
Years Active: 2010-2024
Title: Rosaria Anna Puglisi: Innovator in Semiconductor Doping and Nanometric Devices
Introduction
Rosaria Anna Puglisi is a prominent inventor based in Rome, Italy. She has made significant contributions to the fields of semiconductor doping and nanometric devices. With a total of 2 patents, her work is recognized for its innovative approaches and practical applications.
Latest Patents
Puglisi's latest patents include a method for molecular doping that allows for the uniform and carbon-free doping of semiconductor samples. This method involves several steps, including the removal of oxides from the sample surface and dip coating in a carbon-free solution. The process results in a self-assembled mono-layer of dopant atoms that are diffused into the sample through annealing.
Another notable patent is for a nanometric device designed to measure the electrical conductivity and quantum effects of individual molecules. This device features a substrate with multiple layers, including a barrier to diffusion and an electrically conductive layer. It also includes a miniaturized probe for precise measurements, making it a valuable tool for research in molecular conductivity.
Career Highlights
Puglisi is affiliated with the Consiglio Nazionale Delle Ricerche, where she continues to advance her research and development efforts. Her innovative work has positioned her as a leading figure in her field, contributing to the understanding and application of nanotechnology and semiconductor physics.
Collaborations
Some of her notable coworkers include Sebastiano Caccamo and Sebania Libertino. Their collaborative efforts have further enhanced the impact of Puglisi's research and innovations.
Conclusion
Rosaria Anna Puglisi exemplifies the spirit of innovation in the scientific community. Her contributions to semiconductor doping and nanometric devices are paving the way for future advancements in technology.