Company Filing History:
Years Active: 1987
Title: The Innovative Contributions of Ronald J Johansson
Introduction
Ronald J Johansson is a notable inventor based in Lawrence Township, NJ (US). He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to multi-level metallization.
Latest Patents
Johansson holds a patent for a "Method of forming multi-level metallization." This invention involves creating a patterned first level metallization layer on an isolating layer of a semiconductor substrate. The process includes applying a thick planarizing layer, preferably made of glass, over the first level metallization layer and the exposed areas of the insulating layer. The method further details the formation of a photoresist layer and the isotropic etching of the planarizing layer to achieve a substantially planar surface. This innovative approach enhances the efficiency and effectiveness of semiconductor manufacturing.
Career Highlights
Throughout his career, Johansson has been associated with RCA Inc., where he has contributed to various projects and advancements in semiconductor technology. His work has been instrumental in improving the processes involved in multi-level metallization, which is crucial for modern electronic devices.
Collaborations
Johansson has collaborated with notable colleagues such as Sheng T Hsu and Doris W Flatley. These partnerships have fostered a collaborative environment that has led to further innovations in the field.
Conclusion
Ronald J Johansson's contributions to semiconductor technology through his patent on multi-level metallization exemplify his innovative spirit and dedication to advancing the field. His work continues to influence the development of modern electronic devices.