Nazareth, PA, United States of America

Robert William Criscuolo

This inventor holds 1 USPTO granted patent. Top assignee: Agere Systems Inc.. Active years: 2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Robert William Criscuolo. Retrieved from https://idiyas.com/inventor/robert-william-criscuolo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 53(Granted Patents)


Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: The Innovations of Robert William Criscuolo

Introduction

Robert William Criscuolo is an accomplished inventor based in Nazareth, PA (US). He is known for his significant contributions to the field of semiconductor technology. With a focus on innovative etching methods, Criscuolo has made strides in enhancing the efficiency of silicon dioxide processing.

Latest Patents

Criscuolo holds a patent for an invention titled "Oxide etch." This invention includes a method of etching silicon dioxide, which comprises doping a layer of silicon dioxide to form a layer of doped silicon dioxide and etching the doped silicon dioxide layer with phosphoric acid. This innovative approach has implications for improving semiconductor manufacturing processes.

Career Highlights

Criscuolo has had a notable career at Agere Systems Inc., where he has applied his expertise in semiconductor technology. His work has contributed to advancements in the industry, particularly in the area of material processing.

Collaborations

Criscuolo has collaborated with fellow inventor Charles Walter Pearce, working together to push the boundaries of innovation in their field.

Conclusion

Robert William Criscuolo's contributions to semiconductor technology through his patent and work at Agere Systems Inc. highlight his role as a key innovator in the industry. His dedication to improving etching methods continues to influence the field positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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