Robert M Drosd

Title: The Innovations of Robert M Drosd

Introduction

Robert M Drosd is a notable inventor based in Aloha, Oregon. He has made significant contributions to the field of bipolar integrated technology. With a total of 2 patents to his name, Drosd has focused on advancing VLSI bipolar transistor processes.

Latest Patents

Drosd's latest patents include a VLSI triple-diffused polysilicon bipolar transistor structure. This innovative bipolar VLSI process involves several steps, including masking and patterning, implanting a P+ channel stop, and locally oxidizing a P-doped silicon substrate to define a collector region. The process also includes implanting an N-type collector and diffusing the implants. The device features are photolithographically defined, ensuring precision in the creation of low resistivity P- and N-type regions. His work on the VLSI bipolar transistor process further emphasizes the importance of self-alignment within the collector region, enhancing the efficiency of the transistor.

Career Highlights

Drosd has been instrumental in the development of advanced bipolar integrated technologies. His work at Bipolar Integrated Technology, Inc. has positioned him as a key player in the industry. His innovative approaches have contributed to the evolution of transistor technology, making significant impacts on electronic devices.

Collaborations

Drosd has collaborated with notable professionals in his field, including James M Pickett. These collaborations have fostered an environment of innovation and have led to the development of groundbreaking technologies.

Conclusion

Robert M Drosd's contributions to bipolar integrated technology and his innovative patents highlight his role as a significant inventor in the field. His work continues to influence advancements in electronic devices and transistor technology.