Company Filing History:
Years Active: 1992
Title: The Innovations of Robert Kaliski
Introduction
Robert Kaliski is a notable inventor based in Colorado Springs, CO. He has made significant contributions to the field of semiconductor technology, particularly in the growth of P type Group III-V compound semiconductors. With a total of 2 patents, Kaliski's work has advanced the understanding and application of semiconductor materials.
Latest Patents
Kaliski's latest patents focus on the growth of unintentionally doped P type GaAs on silicon using a metal organic chemical vapor deposition process. This innovative method involves reducing the molecular ratio of arsenic to gallium in the growth ambient, which leads to the creation of donor site vacancies in the GaAs layer. These vacancies are then occupied by acceptor carbon atoms from the metal organic compound, resulting in a buffer GaAs layer with a P type majority carrier characteristic. The process includes an initial MOCVD step at a reduced temperature to form a nucleation layer, followed by a temperature ramp to grow the buffer layer, ensuring the GaAs layer is depleted of arsenic atoms at various crystal sites.
Career Highlights
Robert Kaliski is currently employed at Ford Microelectronics, Inc., where he continues to innovate in the semiconductor field. His work has been instrumental in developing new techniques that enhance the performance and efficiency of semiconductor devices.
Collaborations
Kaliski has collaborated with notable colleagues such as Chris R Ito and David G McIntyre, contributing to a dynamic research environment that fosters innovation and technological advancement.
Conclusion
Robert Kaliski's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the field. His innovative approaches continue to influence the development of advanced semiconductor materials and processes.