Chatham, NJ, United States of America

Robert J McCoy


Average Co-Inventor Count = 3.5

ph-index = 3

Forward Citations = 31(Granted Patents)


Company Filing History:


Years Active: 1979-1983

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3 patents (USPTO):Explore Patents

Title: The Innovations of Robert J McCoy

Introduction

Robert J McCoy is a notable inventor based in Chatham, NJ (US). He has made significant contributions to the field of semiconductor technology. With a total of 3 patents to his name, McCoy's work has had a lasting impact on the industry.

Latest Patents

One of McCoy's latest patents is for a beryllium-gold ohmic contact to a semiconductor device. This invention involves forming an ohmic contact to a semiconductor device comprising p-type InP by sequentially depositing beryllium-gold and gold layers on InP. The device is then heat-treated at a temperature less than 440 degrees C. A similar ohmic contact can also be formed for p-type InGaAsP. Another patent focuses on the ohmic contact to p-type InP, which follows the same process as described above.

Career Highlights

Robert J McCoy has had a distinguished career at Bell Telephone Laboratories. His work has been instrumental in advancing semiconductor technology. His innovative approaches have paved the way for new developments in the field.

Collaborations

McCoy has collaborated with several esteemed colleagues, including Vassilis G Keramidas and Henryk Temkin. These collaborations have further enriched his contributions to the field.

Conclusion

Robert J McCoy's innovations in semiconductor technology demonstrate his expertise and commitment to advancing the industry. His patents reflect a deep understanding of materials and processes that are crucial for modern electronics.

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