Robert G Schad

Title: The Innovations of Robert G Schad

Introduction

Robert G Schad is a notable inventor based in Yorktown Heights, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of low resistance contact structures for n-type gallium arsenide (GaAs). With a total of 5 patents to his name, Schad's work has had a lasting impact on the industry.

Latest Patents

One of his latest patents, titled "Oxygen assisted ohmic contact formation to n-type gallium arsenide," describes a method for creating a low resistance contact structure to n-type GaAs. This innovative contact structure is formed by depositing successive layers of nickel (Ni), gold (Au), germanium (Ge), and nickel again. A fifth layer, made of metallic tungsten oxide, is then added. This tungsten oxide is created by sputtering tungsten onto the four-layer stack in a low-pressure argon plus oxygen atmosphere. The resulting five-layer stack undergoes a rapid thermal anneal (RTA) process, which heats the stack for five seconds at 600 degrees. The final structure consists of an intermetallic NiGe compound with a small amount of AuGa dispersed within it, covered by a metallic tungsten oxide film. The oxygen from this film acts as a gettering mechanism, creating gallium vacancies in the GaAs lattice during the RTA process. This innovative approach results in low contact resistance and a reliable contact structure.

Career Highlights

Robert G Schad has had a distinguished career at International Business Machines Corporation (IBM). His work has focused on enhancing the performance and reliability of semiconductor devices, making him a key figure in the field. His inventions have contributed to advancements in technology that are widely used today.

Collaborations

Throughout his career, Schad has collaborated with notable colleagues, including Edward M Engler and John D Kuptsis. These collaborations have further enriched his work and contributed to the success of various projects.

Conclusion

Robert G Schad's innovative contributions to semiconductor technology, particularly in the formation of low resistance contacts for n-type gallium arsenide, highlight his importance as an inventor. His work continues to influence the industry and pave the way for future advancements.