Company Filing History:
Years Active: 1987-1988
Title: The Innovations of Robert E Theriault
Introduction
Robert E Theriault is a notable inventor based in Ottawa, Canada. He has made significant contributions to the field of integrated circuit manufacturing. With a total of 2 patents, his work has had a lasting impact on technology.
Latest Patents
Theriault's latest patents include a process for plasma etching polysilicon to produce rounded profile islands. In this innovative method, a layer of polysilicon is ion implanted with an n-type dopant and etched through a mask using a fluorine:chlorine mixture. The etchant undercuts at the mask, depending on the ratio of chlorine to fluorine and the dopant level. By selecting the appropriate ratio and dopant level, polysilicon islands with a rounded profile can be achieved, which is particularly effective for subsequent deposition onto the polysilicon. His second patent, the double polysilicon integrated circuit process, utilizes a first level polysilicon for FET gate fabrication and a second level for interconnection. This method allows for the fabrication of analog capacitors over field oxide regions and is particularly suited for creating DRAM memories.
Career Highlights
Theriault has worked at Northern Telecom Limited, where he has been able to apply his innovative ideas in practical settings. His contributions have been instrumental in advancing the technology used in integrated circuits.
Collaborations
Some of his notable coworkers include Thomas Abraham and John Gordon Hogeboom. Their collaborative efforts have further enhanced the development of innovative technologies in their field.
Conclusion
Robert E Theriault's work exemplifies the spirit of innovation in the realm of integrated circuits. His patents reflect a deep understanding of the complexities involved in semiconductor manufacturing. His contributions continue to influence the industry today.