Company Filing History:
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Years Active: 1980
Title: Biography of Inventor Robert C Sun
Introduction: Robert C Sun is a notable inventor based in Whitehall, Pennsylvania. He holds a patent for a significant advancement in dynamic memory technology. His work has contributed to the field of semiconductor structures, particularly in reducing leakage currents in memory devices.
Latest Patents: Robert C Sun's patent, titled "MOS Dynamic memory in a diffusion current limited semiconductor structure," focuses on minimizing reverse bias leakage currents in dynamic MOS random access memory. By reducing minority carrier generation-type currents, he has enabled the leakage currents to be dominated by minority carrier diffusion currents. This innovation is ideally formed in an upper semiconductor layer of a layered structure, which is grown epitaxially with a low dopant concentration on a substrate with a much higher dopant concentration. This design allows for very low leakage currents, optimizing the characteristics of dynamic memory devices.
Career Highlights: Throughout his career, Robert C Sun has worked with prestigious organizations such as Bell Telephone Laboratories and Western Electric Company, Inc. His contributions to the field of semiconductor technology have been recognized and valued in the industry.
Collaborations: Robert has collaborated with notable coworkers, including James T Clemens and Dinesh A Mehta. These partnerships have furthered advancements in the technology sector and have led to innovative solutions in memory device design.
Conclusion: Robert C Sun's work in the field of dynamic memory technology