Company Filing History:
Years Active: 1989
Title: The Innovations of Richard N Gossen, Jr.
Introduction
Richard N Gossen, Jr. is a notable inventor based in Sugarland, TX (US). He has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of dynamic memory devices. His innovative approach has led to the development of a unique patent that addresses challenges in the semiconductor industry.
Latest Patents
Gossen holds a patent titled "Shielding for implant in manufacture of dynamic memory." This patent describes a method for creating semiconductor devices, specifically dynamic read/write memory cell arrays of the one-transistor N-channel silicon gate type. The process involves an ion implant of high dosage to produce N+ source/drain regions. To mitigate the risk of static charge build-up during the ion implant process, a thin coating of polysilicon is applied and grounded before the implant. This innovative method enhances the reliability and performance of semiconductor devices.
Career Highlights
Richard N Gossen, Jr. has had a distinguished career at Texas Instruments Incorporated, where he has applied his expertise in semiconductor technology. His work has been instrumental in advancing the capabilities of dynamic memory devices, making significant impacts in the electronics industry.
Collaborations
Throughout his career, Gossen has collaborated with esteemed colleagues such as William C Bruncke and Gordon D Baker. These partnerships have fostered innovation and contributed to the successful development of advanced semiconductor technologies.
Conclusion
Richard N Gossen, Jr. is a prominent figure in the field of semiconductor innovation, with a patent that showcases his expertise and creativity. His contributions continue to influence the development of dynamic memory devices, solidifying his legacy in the industry.