Shelton, CT, United States of America

Richard F Gorssman


Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 1992

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1 patent (USPTO):Explore Patents

Title: Richard F. Gorssman: Innovator in Capacitor Technology

Introduction

Richard F. Gorssman is a notable inventor based in Shelton, CT (US). He has made significant contributions to the field of capacitor technology. His innovative work has led to the development of a unique method for creating capacitors that utilize stannic terephthalate.

Latest Patents

Gorssman holds a patent for a method of making capacitors containing stannic terephthalate. This compound has been prepared and is recognized for its unusually high dielectric constant, electrical and thermal stabilities, and high volume resistivity. These properties make stannic terephthalate an ideal material for use as a capacitor dielectric.

Career Highlights

Gorssman is associated with Synthetic Products Company, where he has applied his expertise in materials science. His work has contributed to advancements in capacitor technology, enhancing the performance and reliability of electronic components.

Collaborations

Gorssman has collaborated with David M. Tanno, working together to further their research and development efforts in the field of capacitors.

Conclusion

Richard F. Gorssman's contributions to capacitor technology through his innovative methods and collaboration with colleagues highlight his importance in the field. His work continues to influence advancements in electronic materials.

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