Renhua Zhang

Title: Renhua Zhang: Innovator in Non-Volatile Memory Technology

Introduction

Renhua Zhang is a prominent inventor based in Santa Clara, CA, known for his contributions to the field of non-volatile memory devices. He has made significant strides in the development of advanced memory technologies, particularly in the area of 3-D NAND flash memory.

Latest Patents

Renhua Zhang holds a patent for a memory device with a multi-layer channel and charge trapping layer. This innovative 3-D/vertical non-volatile memory device includes vertical openings disposed in a stack of alternating layers over a wafer. The device features a multi-layer dielectric on the inner sidewall of each opening, a first channel layer over the multi-layer dielectric, and a second channel layer over the first channel layer. Notably, at least one of the channel layers incorporates polycrystalline germanium or silicon-germanium. This patent showcases his expertise in creating efficient and advanced memory solutions.

Career Highlights

Renhua Zhang is currently employed at Cypress Semiconductor Corporation, where he continues to push the boundaries of memory technology. His work has been instrumental in enhancing the performance and reliability of non-volatile memory devices, making significant contributions to the semiconductor industry.

Collaborations

Throughout his career, Renhua has collaborated with notable colleagues, including Lei Xue and Rinji Sugino. These partnerships have fostered innovation and have been crucial in advancing their shared goals in memory technology.

Conclusion

Renhua Zhang's work in the field of non-volatile memory technology exemplifies his dedication to innovation and excellence. His patent and contributions at Cypress Semiconductor Corporation highlight his role as a key player in the advancement of memory devices.