Location History:
- Somers, NY (US) (1984)
- Reston, VA (US) (1977 - 1989)
Company Filing History:
Years Active: 1977-1989
Title: Reinhard Glang: Innovator in Semiconductor Technology
Introduction
Reinhard Glang is a notable inventor based in Reston, VA (US), recognized for his contributions to semiconductor technology. He holds a total of 4 patents that reflect his expertise and innovative spirit in the field.
Latest Patents
Glang's latest patents include a self-aligned polysilicon emitter and contact structure for high-performance bipolar devices. This semiconductor process enhances device performance by protecting selected surfaces of the epi-layer during the formation of emitter/contact regions. Additionally, it improves the planarization of an insulating layer on the epi-layer through chemical-mechanical polishing, facilitating the creation of self-aligned emitter/base regions. Another significant patent involves an improved etchant composition for the resistivity-specific etching of doped silicon films. This etchant composition ensures controlled etching without leaving silicon residue, providing a precise etch stop at lightly doped or intrinsic regions.
Career Highlights
Reinhard Glang is currently associated with International Business Machines Corporation (IBM), where he continues to advance semiconductor technologies. His work has significantly impacted the efficiency and performance of bipolar devices.
Collaborations
Glang has collaborated with esteemed colleagues such as San-Mei Ku and Alfred Schmitt, contributing to the development of innovative solutions in semiconductor processes.
Conclusion
Reinhard Glang's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in device performance and manufacturing processes.