La Jolla, CA, United States of America

Rebecca Welty


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2004

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Rebecca Welty: Innovator in Heterojunction Bipolar Transistors

Introduction

Rebecca Welty is an accomplished inventor based in La Jolla, California. With a focus on semiconductor technology, she has made significant contributions to the field of heterojunction bipolar transistors (HBTs). Her work addresses critical challenges in current blocking effects, showcasing her innovative spirit and technical expertise.

Latest Patents

Rebecca Welty holds a patent for "HBT with nitrogen-containing current blocking base collector interface and method for current blocking." This patent presents an improved HBT design that reduces the current blocking effect at the base-collector interface. By incorporating nitrogen at the interface, she successfully lowers the conduction band energy of the collector to equal that of the base. In her preferred embodiment, a nitrogen concentration of approximately 2% is utilized within a thin layer of about 20 nm at the base-collector interface. The invention is applicable to both GaAs HBTs and InP transistors in various layer structures, including single and double heterojunction bipolar transistors as well as blocked hole bipolar transistors.

Career Highlights

Rebecca is affiliated with the University of California, where she contributes her knowledge and expertise in research and development. Her work at this prestigious institution emphasizes her commitment to advancing technology and innovation in the semiconductor sector.

Collaborations

Throughout her career, Rebecca has collaborated with notable professionals such as Charles W. Tu and Peter M. Asbeck. These partnerships reflect her ability to work alongside other experts in her field, contributing to advancements in technology and innovation.

Conclusion

Rebecca Welty is a remarkable inventor whose contributions to heterojunction bipolar transistors significantly enhance the field of semiconductor technology. Her innovative patent demonstrates her dedication to pushing the boundaries of research and development, paving the way for future advancements.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…