Raymond H Doklan

Title: The Innovations of Raymond H. Doklan

Introduction

Raymond H. Doklan is a notable inventor based in Whitehall Township, PA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of low defect density oxides. His work has implications for the efficiency and reliability of semiconductor devices.

Latest Patents

Doklan holds a patent for "Fabricating a semiconductor device with low defect density oxide." This patent describes a method for creating low defect density oxides that are suitable for use as thin gate oxides or in charge storage capacitors. The process involves forming first and second layers on a substrate with misaligned defect structures, followed by the growth of a third layer through the diffusion of a species that reacts with the substrate. The innovative approach results in a low defect density due to the unique structure of the layers.

Career Highlights

Raymond H. Doklan has worked with American Telephone & Telegraph Co. and AT&T Bell Laboratories. His career has been marked by a commitment to advancing semiconductor technology and improving device performance. His patent reflects his expertise and innovative thinking in the field.

Collaborations

Throughout his career, Doklan has collaborated with notable colleagues, including Edward P. Martin, Jr. and Pradip Kumar Roy. These collaborations have contributed to the advancement of technology in the semiconductor industry.

Conclusion

Raymond H. Doklan's contributions to semiconductor technology through his innovative patent demonstrate his significant role in the field. His work continues to influence the development of efficient and reliable semiconductor devices.