Rani Holani

Title: Rani Holani: Innovator in Precision Resistor Technology

Introduction

Rani Holani is a prominent inventor based in Indore, India. She has made significant contributions to the field of electrical engineering, particularly in the development of precision resistors. Her innovative work has led to the creation of a unique circuit that enhances the functionality of resistors using advanced semiconductor technology.

Latest Patents

Rani Holani holds a patent for a "Continuously variable precision and linear floating resistor using metal-oxide-semiconductor field-effect transistors." This invention discloses a circuit designed to realize a precision and linear floating resistor utilizing MOSFET devices. The linear floating voltage-controlled resistor (LFVCR) is achieved through a MOSFET with a gate drive and substrate drive means, providing feedback of the common-mode voltage across the source-drain terminals. The invention includes two LFVCR circuits using matched MOSFET devices with independent substrates, along with an op-amp based negative feedback loop. This allows for the realization of a continuously variable precision and linear floating resistor, whose value can be controlled by a combination of variable voltage, current, and resistor. Further embodiments improve linearity and extend resistance and current ranges.

Career Highlights

Rani Holani is affiliated with the Indian Institute of Technology Bombay, where she continues to advance her research and innovation in electrical engineering. Her work has garnered attention for its practical applications and contributions to the field.

Collaborations

Rani has collaborated with notable colleagues, including Prem Chand Pandey and Shibam Debbarma, who have contributed to her research endeavors.

Conclusion

Rani Holani's innovative work in precision resistor technology exemplifies her commitment to advancing electrical engineering. Her contributions through her patent reflect her expertise and dedication to innovation in the field.