Company Filing History:
Years Active: 1990-1991
Title: Randy McKee: Innovator in DRAM Technology
Introduction
Randy McKee is a notable inventor based in Plano, TX (US), recognized for his contributions to the field of dynamic random-access memory (DRAM) technology. With a total of 2 patents, he has made significant advancements in the design and manufacturing methods of DRAM cells.
Latest Patents
Randy McKee's latest patents include innovative methods for fabricating trench DRAM cells. The first patent describes a DRAM cell with a trench capacitor, where the first plate is formed as a diffusion on the outside surface of a trench in the substrate. The second plate consists of a conductive region inside the trench. This design incorporates a field plate isolation structure that features a self-aligned moat area for the transfer transistor, enhancing misalignment tolerance. The field plate is etched with sloped sidewalls to prevent the formation of conductive filaments from subsequent layers on the integrated circuit. Additionally, a self-aligned bitline contact between two memory cells eliminates alignment tolerances between the bitline contact and the gates of the transfer transistors.
The second patent also focuses on a method of making a trench DRAM cell with a stacked capacitor and buried features. Similar to the first patent, it emphasizes the importance of the trench capacitor design and the field plate isolation structure, ensuring improved manufacturing processes and device performance.
Career Highlights
Randy McKee is currently employed at Texas Instruments Corporation, where he continues to innovate in the field of semiconductor technology. His work has contributed to the advancement of memory cell designs, which are crucial for modern computing applications.
Collaborations
Throughout his career, Randy has collaborated with talented individuals such as Bing-Whey Shen and Gishi Chung. These partnerships have fostered a creative environment that encourages the development of cutting-edge technologies.
Conclusion
Randy McKee's contributions to DRAM technology through his patents and work at Texas Instruments Corporation highlight his role as a significant innovator in the field. His advancements in memory cell design continue to influence the future of semiconductor technology.