Company Filing History:
Years Active: 2013
Title: Innovations of Randolph E Flauta in Nanoscale Patterning
Introduction
Randolph E Flauta is a notable inventor based in Barangay Kapitolyo, Pasig, Philippines. He has made significant contributions to the field of semiconductor technology, particularly in the area of nanoscale patterning. His innovative methods have the potential to advance various applications in electronics and materials science.
Latest Patents
Randolph E Flauta holds a patent for a method of forming nanoscale three-dimensional patterns in a porous material. This method involves providing a film comprising a semiconductor material and defining a nanoscale metal pattern on the film. The metal pattern has at least one lateral dimension of about 100 nm or less in size. The process includes removing semiconductor material from below the nanoscale metal pattern to create trenches in the film, achieving a depth-to-width aspect ratio of at least about 10:1. This technique results in the formation of pores in the remaining portions of the film adjacent to the trenches, ultimately creating a three-dimensional pattern with at least one nanoscale dimension in a porous semiconductor, such as porous silicon. The method can also be extended to form self-integrated porous low-k dielectric insulators with copper interconnects, facilitating wafer-level chip scale packaging integration.
Career Highlights
Randolph E Flauta is affiliated with the University of Illinois, where he continues to engage in research and development in semiconductor technologies. His work has garnered attention for its innovative approach to nanoscale engineering, contributing to advancements in the field.
Collaborations
He has collaborated with esteemed colleagues, including Xiuling Li and David N Ruzic, who share his passion for pushing the boundaries of semiconductor research.
Conclusion
Randolph E Flauta's contributions to the field of nanoscale patterning exemplify the innovative spirit of modern inventors. His patented methods hold promise for future advancements in semiconductor technology and materials science.