Company Filing History:
Years Active: 2025
Title: Innovations of Rajesh Kumar Biswal
Introduction
Rajesh Kumar Biswal is a notable inventor based in Puri, India. He has made significant contributions to the field of memory devices, particularly in enhancing write buffer flush schemes. His innovative approach has implications for high-density storage memory architectures.
Latest Patents
Rajesh Kumar Biswal holds a patent titled "Enhanced write buffer flush scheme for memory devices with high density storage memory architecture." This patent provides systems, methods, and devices for memory systems that support enhanced write buffer flush schemes. The method performed by a memory controller includes maintaining a list of data segments stored in a write buffer with a single-level cell memory architecture. The list includes a data segment identifier and an available contiguous memory space in the write buffer if the data segment is flushed. The list is sorted based on the available contiguous memory space. The method also includes detecting a flush opportunity and initiating a flush operation to write a data segment from the write buffer to a memory module with a higher storage density memory architecture.
Career Highlights
Rajesh Kumar Biswal is currently employed at Qualcomm Incorporated, a leading company in the technology sector. His work focuses on advancing memory technology, which is crucial for modern computing devices. His innovative contributions have positioned him as a valuable asset in the field of memory systems.
Collaborations
Rajesh has collaborated with notable colleagues such as Manmeet Singh Ahluwalia and Surendra Paravada. These collaborations have further enhanced his work and contributed to the development of cutting-edge technologies in memory devices.
Conclusion
Rajesh Kumar Biswal's innovative work in memory technology exemplifies the importance of advancements in high-density storage solutions. His contributions through patents and collaborations continue to shape the future of memory systems.