San Jose, CA, United States of America

Rajesh Chopdekar


Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2025

Loading Chart...
1 patent (USPTO):

Title: Rajesh Chopdekar - Innovator in VCMA Memory Devices

Introduction

Rajesh Chopdekar is an esteemed inventor based in San Jose, CA, known for his contributions to the field of memory devices. His work has led to the development of innovative technologies that enhance memory storage capabilities.

Latest Patents

One of Rajesh's notable patents is for "Voltage controlled magnetic anisotropy (VCMA) memory devices including platinum containing layer in contact with free layer." This invention outlines a memory device that comprises a first electrode, a second electrode, and a magnetic tunnel junction positioned between them. The magnetic tunnel junction features a reference layer, a free layer, and a nonmagnetic tunnel barrier layer separating the reference from the free layer. A unique aspect of this patent is the inclusion of a platinum-containing layer that contacts the free layer, significantly improving the device's performance and efficiency.

Career Highlights

Rajesh Chopdekar is currently affiliated with SanDisk Technologies Inc., a leading company in data storage solutions. His role involves pioneering advancements in memory technology, contributing to the company's mission of delivering innovative storage solutions.

Collaborations

Throughout his career, Rajesh has had successful collaborations with respected professionals in the industry, including colleagues Alan Kalitsov and Bhagwati Prasad. These partnerships have played a crucial role in the development of his inventions and have fostered a collaborative environment for technological advancement.

Conclusion

Rajesh Chopdekar continues to be a significant figure in the field of memory devices, and his patent on VCMA memory technology exemplifies his commitment to innovation. With his expertise and collaborations, he is poised to make further contributions that could shape the future of data storage.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…