Raghuveer Satya Makala

Title: Raghuveer Satya Makala: Innovator in Oxide Layer Technology

Introduction

Raghuveer Satya Makala is a notable inventor based in Sunnyvale, California. He has made significant contributions to the field of semiconductor technology, particularly in the growth of thin oxide layers.

Latest Patents

Makala holds a patent for a method titled "Growth of thin oxide layer with silicon nitride and conversion." This innovative process involves forming a protective interlayer oxide on the sidewalls of a trench on a substrate. It also includes the formation of a silicon nitride layer using a plasma-enhanced atomic layer deposition (PE ALD) process with nitrogen-containing gas. The silicon nitride layer features a nitrogen concentration gradient, which is crucial for the subsequent conversion process that oxidizes the silicon nitride layer into a silicon oxide layer.

Career Highlights

Raghuveer Satya Makala is currently employed at Applied Materials, Inc., a leading company in the semiconductor industry. His work focuses on advancing technologies that enhance the performance and efficiency of semiconductor devices.

Collaborations

Makala has collaborated with several talented individuals in his field, including Fredrick Fishburn and Hao Zhang. These partnerships have contributed to the development of innovative solutions in semiconductor technology.

Conclusion

Raghuveer Satya Makala is a distinguished inventor whose work in oxide layer technology has the potential to impact the semiconductor industry significantly. His innovative methods and collaborations highlight his commitment to advancing technology.